Related Experiment Video

Updated: Oct 25, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Exciton effects in sequential resonant tunneling of photocarriers in GaAs/AlAs multiple quantum wells

Schneider, Wagner, Ploog

    Physical Review. B, Condensed Matter
    |October 15, 1993
    PubMed
    Abstract

    No abstract available in PubMed .

    More Related Videos

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots15:47

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

    Published on: November 1, 2013

    Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing15:58

    Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

    Published on: December 3, 2013

    Related Concept Videos

    Carrier Generation and Recombination01:22

    Carrier Generation and Recombination

    Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
    This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
    Indirect generation involves an...