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Strongly photonic macroporous gallium phosphide networks

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  • 1Van der Waals-Zeeman Instituut, Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands. Debye Instituut, Universiteit Utrecht, Post Office Box 80000, 3508 TA Utrecht, The Netherlands.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optics

Background:

  • Gallium phosphide (GaP) is a semiconductor with potential applications in optoelectronics.
  • Controlling the nanostructure of GaP can tune its optical properties.
  • Fabricating macropores in GaP presents challenges for material design.

Purpose of the Study:

  • To develop a photo-assisted electrochemical etching technique for creating macroporous gallium phosphide (GaP).
  • To investigate the structural and optical properties of the fabricated macroporous GaP.
  • To demonstrate control over light scattering by tuning pore characteristics and filling media.

Main Methods:

  • Photo-assisted electrochemical etching of single-crystalline GaP.
  • Scanning electron microscopy (SEM) for structural analysis.
  • X-ray diffraction (XRD) for crystallographic information.
  • Optical transmission measurements to assess light scattering.

Main Results:

  • Successfully fabricated 3D interconnected macroporous GaP networks with ~150 nm pores.
  • Confirmed the disordered, nonabsorbing nature of the macroporous structures.
  • Demonstrated strong light scattering, with efficiency tunable by pore filling.
  • Identified air-filled macroporous GaP as having the highest scattering for visible light.

Conclusions:

  • The developed photo-assisted electrochemical etching is an effective method for creating tunable macroporous GaP.
  • The resulting macroporous GaP exhibits significant light scattering, useful for photonic applications.
  • Controlling the refractive index of the pore-filling medium allows for photonic strength modulation.