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Quantitative electron spectroscopic imaging studies of microelectronic metallization layers
1Max-Planck-Institut für Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany.
Journal of Microscopy
|May 13, 1999
Summary
Focused ion beam (FIB) preparation combined with electron spectroscopic imaging analyzes microelectronic metallization layers. This technique reveals subsurface defects in copper layers, likely caused by gallium ion interactions during FIB processing.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Science
Background:
- Microelectronic metallization relies on layered structures.
- Investigating these layers at the nanoscale is crucial for device performance.
- Physical vapor deposition is a common technique for creating these layers.
Purpose of the Study:
- To investigate Si3N4/Cu/Si3N4/SiO2/Si and Al/TiN/Ti/SiO2/Si metallization layers.
- To refine Focused Ion Beam (FIB) sample preparation parameters using energy filtered images.
- To obtain elemental distribution and chemical bonding information at the nanometer scale.
Main Methods:
- Focused Ion Beam (FIB) for sample preparation.
- Quantitative electron spectroscopic imaging (e.g., energy filtered images in low loss and core loss regions).
- Hollow cone illumination to mitigate Bragg contrast effects.
Main Results:
- Thickness mapping of metallization layers was achieved.
- Elemental distribution and chemical bonding were mapped at the nanometer scale.
- Subsurface defects in copper layers, attributed to Gallium (Ga) ion interaction from FIB, were observed.
Conclusions:
- FIB preparation and quantitative electron spectroscopic imaging are effective for analyzing microelectronic layered structures.
- Hollow cone illumination significantly reduces Bragg contrast interference in elemental mapping.
- Gallium ion implantation during FIB processing can induce subsurface defects in copper layers.