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Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
1IBM T. J. Watson Research Center, Post Office Box 218, Yorktown Heights, NY 10598, USA.
Germanium-silicon islands transition from pyramids to domes during growth on silicon. This shape change, influenced by temperature, occurs via intermediate states and is reversible upon cooling, supporting an anomalous coarsening model.
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