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Quantization of multiparticle auger rates in semiconductor quantum dots

Klimov1, Mikhailovsky, McBranch

  • 1Chemical Science and Technology Division, CST-6, MS-J585, Los Alamos National Laboratory, Los Alamos, NM 87545, USA. Department of Chemistry and Center for Materials Science and Engineering, Massachusetts Institute of Technology, 77 Mass.

Science (New York, N.Y.)
|February 11, 2000
PubMed
Summary

We studied electron-hole pair relaxation in cadmium selenide quantum dots. The carrier decay rate follows an Auger process, decreasing with smaller quantum dot size.

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Area of Science:

  • Quantum dot physics
  • Semiconductor nanomaterials
  • Optoelectronics

Background:

  • Cadmium selenide (CdSe) quantum dots are crucial in optoelectronics.
  • Understanding carrier dynamics is key to improving device performance.
  • Auger processes significantly impact carrier lifetimes in nanomaterials.

Purpose of the Study:

  • To investigate the relaxation dynamics of multiple electron-hole pair states in CdSe quantum dots.
  • To determine the dependence of carrier decay rate on carrier concentration and quantum dot size.
  • To elucidate the role of Auger processes in quantum-confined systems.

Main Methods:

  • Synthesis of nearly monodisperse CdSe quantum dots with radii from 1 to 4 nm.
  • Spectroscopic resolution of single-exponential relaxation dynamics for 2-, 3-, and 4-electron-hole pair states.

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  • Analysis of relaxation constants to determine carrier decay mechanisms.

    • Main Results:

    • Resolved single-exponential relaxation dynamics for multiple exciton states.
    • Identified carrier decay rate as cubic in carrier concentration, indicative of an Auger process.
    • Observed a strong, size-dependent Auger constant that decreases with decreasing quantum dot radius (cubed).

    Conclusions:

    • The carrier decay in CdSe quantum dots is dominated by Auger recombination.
    • The quantum-confined Auger process is strongly dependent on quantum dot size.
    • Smaller quantum dots exhibit reduced Auger recombination rates, beneficial for optoelectronic applications.