RETRACTED: Ambipolar pentacene field-effect transistors and inverters

Area of Science:

• Materials Science
• Organic Electronics
• Semiconductor Physics

Background:

• Organic field-effect transistors (OFETs) are crucial for flexible electronics.
• Achieving high carrier mobility in OFETs is essential for device performance.
• Complementary logic circuits require both p-type and n-type semiconductor behavior.

Purpose of the Study:

• To investigate the performance of pentacene single-crystal OFETs with an amorphous aluminum oxide gate insulator.
• To characterize the ambipolar operation and carrier mobilities of these devices.
• To assess the potential for fabricating complementary logic circuits using these OFETs.

Main Methods:

• Fabrication of OFETs using pentacene single crystals and amorphous aluminum oxide gate insulator.
• Electrical characterization of the devices at room and low temperatures.
• Analysis of carrier mobility using field-effect measurements.
• Evaluation of device performance in complementary inverter circuits.

Main Results:

• The OFETs demonstrated ambipolar operation, supporting both hole and electron transport.
• Field-effect mobilities significantly increased at low temperatures, reaching 1200 cm²/Vs for holes and 320 cm²/Vs for electrons.
• Carrier mobility followed a power-law dependence with decreasing temperature.
• Successful preparation of complementary inverter circuits was achieved.

Conclusions:

• Pentacene single-crystal OFETs with amorphous aluminum oxide exhibit excellent ambipolar characteristics and high carrier mobility.
• The observed high mobilities and demonstrated complementary logic circuits represent a significant advancement for plastic electronics.
• These findings suggest a simplified fabrication pathway for high-performance organic complementary logic circuits.