Metastability of Si1-yCy epilayers under 2 MeV alpha-particle irradiation

Area of Science:

• Materials Science
• Nuclear Physics
• Semiconductor Physics

Background:

• Silicon carbide (SiC) alloys epitaxially grown on silicon are crucial in semiconductor applications.
• Understanding material transformations under irradiation is vital for device reliability.
• Backscattering techniques are standard for characterizing these SiC alloys.

Purpose of the Study:

• To investigate the effects of alpha-particle irradiation on Si1-yCy alloys epitaxially grown on silicon.
• To differentiate irradiation-induced structural changes from those caused by thermal treatments.
• To quantify the relationship between irradiation damage and substitutional carbon content.

Main Methods:

• Alpha-particle irradiation of Si1-yCy/Si epitaxial layers.
• Analysis of material structure and damage using backscattering techniques.
• Comparison of irradiation-induced changes with results from thermal treatments.

Main Results:

• Irradiation damage induces structural modifications in Si1-yCy alloys.
• The observed damage rate under irradiation is significantly higher than in pure silicon.
• The fraction of affected silicon atoms is directly proportional to the substitutional carbon concentration.

Conclusions:

• Alpha-particle irradiation leads to unique structural transformations in SiC alloys, differing from thermal effects.
• The high damage rate and its correlation with carbon content provide insights into the material's response to energetic particles.