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Related Experiment Videos

Crossed nanotube junctions

Fuhrer1, Nygard, Shih

  • 1Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA. Department of Physics and Center for Theoretical Physics, Seoul National University.

Science (New York, N.Y.)
|April 25, 2000
PubMed
Summary
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Researchers fabricated junctions using crossed single-walled carbon nanotubes. They found that metallic-semiconducting junctions form rectifying Schottky barriers, crucial for electronic devices.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Single-walled carbon nanotubes (SWCNTs) are promising materials for nanoelectronic devices.
  • Understanding the electrical properties of junctions between different types of SWCNTs is essential for device fabrication.

Purpose of the Study:

  • To fabricate and characterize junctions formed by crossed single-walled carbon nanotubes.
  • To investigate the electrical properties of metallic-metallic (MM), metallic-semiconducting (MS), and semiconducting-semiconducting (SS) junctions.
  • To analyze the formation of Schottky barriers in MS junctions.

Main Methods:

  • Fabrication of crossed SWCNT junctions with electrical contacts.
  • Identification of individual SWCNTs as metallic (M) or semiconducting (S) using two-terminal conductance measurements.

Related Experiment Videos

  • Characterization of MM, MS, and SS junctions using four-terminal measurements.
  • Utilizing two- and three-terminal experiments to analyze junction behavior.

    • Main Results:

    • MM and SS junctions exhibited high conductances, approximately 0.1 e^2/h.
    • MS junctions displayed rectifying behavior due to the formation of a Schottky barrier.
    • The semiconducting nanotube in MS junctions was depleted by the adjacent metallic nanotube.

    Conclusions:

    • Crossed SWCNT junctions can be controllably fabricated.
    • The electrical properties of SWCNT junctions depend on the types of nanotubes involved (MM, MS, SS).
    • MS junctions form rectifying Schottky barriers, indicating potential for diode applications in nanoelectronics.