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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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The spatial distribution and resolution of coaxial backscattered electrons in SEM, calculated by monte carlo

Jiang1, Rosenberg, Morin

  • 1Departement de Physique des Materiaux, Universite Claude Bernard Lyon1, UMR 5586, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France.

Journal of Microscopy
|April 26, 2000
PubMed

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