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Related Experiment Videos

Microscopy of Metal Oxide Surfaces.

Castell1, Dudarev, Muggelberg

  • 1Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|July 18, 2000
PubMed
Summary

High-temperature microscopy reveals oxide surface structures and defects. This technique enables atomic-level imaging of materials like NiO, CoO, and UO(2) by overcoming their insulating properties at room temperature.

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Area of Science:

  • Materials Science
  • Surface Science
  • Solid State Physics

Background:

  • Many technologically important oxides are insulators at room temperature.
  • Electrical conductivity is necessary for surface imaging techniques like scanning tunneling microscopy.
  • Understanding oxide surface structure and defects is crucial for various applications.

Purpose of the Study:

  • To develop and apply high-temperature scanning tunneling microscopy (HT-STM) for imaging electrically insulating oxides.
  • To determine the surface structure and identify defects in Nickel Oxide (NiO), Cobalt Oxide (CoO), and Uranium Dioxide (UO(2)).
  • To investigate the surface energy ratio of different crystallographic planes in UO(2) using low-voltage scanning electron microscopy (LV-SEM).

Main Methods:

  • Utilizing elevated temperature scanning tunneling microscopy (HT-STM) to achieve sufficient electrical conductivity for atomic resolution imaging.

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  • Performing electronic surface structure modeling to interpret image contrast and identify contributing atomic sites.
  • Employing low voltage scanning electron microscopy (LV-SEM) to image equilibrium pores in UO(2) single crystals.

    • Main Results:

    • Atomic resolution images of NiO, CoO, and UO(2) surfaces were successfully obtained using HT-STM.
    • Surface structure and defects were identified in the studied oxides.
    • Modeling provided insights into the origin of contrast in HT-STM images.
    • The surface energy ratio of (111) to (001) surfaces in UO(2) was evaluated.

    Conclusions:

    • Elevated temperature STM is a viable technique for atomic-resolution surface characterization of oxides that are insulators at ambient temperatures.
    • The study provides valuable data on the surface structure and defects of NiO, CoO, and UO(2).
    • LV-SEM is effective for evaluating surface energy ratios in UO(2) single crystals.