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Updated: Aug 1, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
Published on: April 4, 2017
TEM measurement of strain in coherent quantum heterostructures
Abstract:
We report on a transmission electron microscopy (TEM) technique that can be used to measure strain due to individual nanometer-scale coherent heterostructures such as quantum dots or inclusions. The measurement relies on two-beam imaging and on an approximation that employs a universal model for lattice plane bending. We demonstrate that analysis is simple and accurate. Using this method, we measured the average strain in dome-shaped Ge islands grown on Si (0 0 1). We found that the method of specimen preparation can significantly affect the observed strain in these islands.
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