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Semiconductor devices "from inside"

Mil'shtein1

  • 1Advanced Electronic Technology Center, Department of Electrical and Computer Engineering, University of Massachusetts, Lowell 01854, USA.

Scanning
|August 25, 2000
PubMed
Summary

Differential Voltage Contrast (DVC) in scanning electron microscopy visualizes semiconductor device operation by mapping potential and doping profiles. This technique enables precise, dynamic measurement of quasi-Fermi energy distributions for various electronic components.

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Area of Science:

  • Solid State Physics
  • Materials Science
  • Electrical Engineering

Background:

  • Semiconductor device operation relies on intricate electrical field and charge distributions.
  • Quasi-Fermi energy (QFE) profiles dynamically represent device operational status.
  • Existing visualization methods lack quantitative precision for dynamic QFE profiling.

Purpose of the Study:

  • To introduce and validate Differential Voltage Contrast (DVC) as a quantitative imaging technique for semiconductor devices.
  • To demonstrate DVC's capability in visualizing and measuring dynamic electrical field and charge distributions.
  • To establish DVC for precise mapping of quasi-Fermi energy profiles.

Main Methods:

  • Differential Voltage Contrast (DVC), a modification of scanning electron microscopy (SEM) secondary electron imaging.
  • Acquisition of two aligned SEM images: one unbiased, one biased, of the semiconductor device cross-section.
  • Pixel-by-pixel image subtraction to isolate electrical field contributions and remove morphological contrast.

Main Results:

  • DVC successfully visualizes dynamic operation by revealing electrical field contributions to contrast changes.
  • Quantitative potential distribution mapping achieved with 0.05 V precision after calibration.
  • First and second derivatives of potential profiles yield electrical field and doping distributions, respectively.

Conclusions:

  • DVC provides a powerful, non-invasive method for quantitative analysis of semiconductor device operation.
  • The technique is applicable to a wide range of semiconductor devices, including FETs, diodes, and lasers.
  • Videotaping DVC enables observation of real-time changes in electrical fields and charge distributions under varying operational signals.

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