Crystallization in low-energy deposition of titanium ions

To investigate crystallization in the ion beam deposition process, titanium ions were deposited on silicon wafers at 105 and 55 eV. As titanium is an active metal, titanium compounds are formed by absorbing backfilled or residual gas. At energy levels of 105 or 55 eV, titanium crystallizes in a NaCl-type titanium compound with the backfilling of air. In all samples, (110)-oriented crystals grew with a rectangular lattice arrangement of titanium atoms. The open channel <110> of preferentially oriented crystal growth was parallel to the direction of incident ions normal to the substrate surface.