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Small-angle shubnikov-de haas measurements in a 2D electron system: the effect of a strong In-plane magnetic field
1Physics Department, City College of the City University of New York, New York, New York 10031, USA.
Abstract:
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of 2 increase of the frequency of Shubnikov-de Haas oscillations at H>H(sat). This signals the onset of full spin polarization above H(sat), the parallel field above which the resistivity saturates to a constant value. For H
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