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Related Experiment Videos

Hot-electron effects in two-dimensional hopping with a large localization length

Gershenson1, Khavin, Reuter

  • 1Serin Physics Laboratory, Rutgers University, Piscataway, New Jersey 08854-8019, USA.

Physical Review Letters
|September 6, 2000
PubMed
Summary

Nonlinear resistance in two-dimensional systems is caused by electron overheating, not field effects, signaling a new type of hopping transport with large localization length.

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Area of Science:

  • Condensed matter physics
  • Quantum mechanics

Background:

  • Understanding electron transport in disordered systems is crucial.
  • Localization phenomena affect conductivity in two-dimensional (2D) materials.
  • The crossover from weak to strong localization is a key area of study.

Purpose of the Study:

  • Investigate nonlinear resistance effects in 2D systems near the localization transition.
  • Determine the underlying mechanisms responsible for observed nonlinearities.
  • Characterize the nature of hopping transport in systems with large localization lengths.

Main Methods:

  • Experimental study of resistance in a 2D system.
  • Analysis of nonlinear current-voltage characteristics.
  • Comparison of experimental data with theoretical models of electron transport.

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Main Results:

  • Nonlinear effects in resistance were observed in a 2D system with large localization length.
  • The observed nonlinearity is attributed to electron overheating, not external electric field effects.
  • This finding is characteristic of 2D hopping transport in the specified regime.

Conclusions:

  • Electron overheating is identified as the primary cause of nonlinearity in 2D hopping transport with large localization lengths.
  • This phenomenon represents a distinct signature of transport behavior on either side of the weak-to-strong localization crossover.
  • The study provides new insights into the fundamental physics of disordered electronic systems.