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Related Experiment Videos

Metal-semiconductor nanocontacts: silicon nanowires

Landman1, Barnett, Scherbakov

  • 1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA.

Physical Review Letters
|September 6, 2000
PubMed
Summary

This study reveals that short silicon nanowires exhibit finite conductance due to metallization. Longer wires form Schottky barriers, requiring gate voltages for transport and showing interference resonances.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Silicon nanowires are promising for nanoelectronic devices.
  • Understanding their electrical properties is crucial for device applications.
  • Contact effects significantly influence nanowire conductivity.

Purpose of the Study:

  • To investigate the electronic transport properties of silicon nanowires.
  • To analyze the impact of wire length and contacts on conductance.
  • To explore the formation of Schottky barriers in silicon nanowires.

Main Methods:

  • Large-scale local-density-functional simulations were employed.
  • Simulations considered silicon nanowires of varying lengths (0.6 nm and 2.5 nm).
  • The study analyzed the effects of aluminum electrodes and passivation.

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Main Results:

  • Short silicon nanowires (approx. 0.6 nm) are fully metallized, showing finite conductance (approx. e^2/h).
  • Longer silicon nanowires (approx. 2.5 nm) develop nanoscale Schottky barriers, 40-90% higher than bulk values.
  • Electrical transport is dependent on doping and gate voltages, with conductance spectra showing interference resonances.

Conclusions:

  • The length of silicon nanowires critically determines their electronic transport characteristics.
  • Schottky barrier formation at contacts significantly impacts conductance in longer nanowires.
  • Simulations provide insights into the quantum transport phenomena in silicon nanowires.