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Updated: Oct 13, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Fast diffusion of H and creation of dangling bonds in hydrogenated amorphous silicon studied by in situ ESR

Das1, Yasuda, Yamasaki

  • 1Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305 0046, Japan.

Physical Review Letters
|September 8, 2000
PubMed

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