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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Spin fractionalization of an even number of electrons in a quantum Dot

Giuliano1, Tagliacozzo

  • 1Istituto Nazionale di Fisica della Materia (INFM), Unita di Napoli, Napoli, Italy and Department of Physics, Stanford University, Stanford, California 94305, USA.

Physical Review Letters
|September 16, 2000
PubMed

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