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Domain wall resistivity in SrRuO3.
L Klein1, Y Kats, A F Marshall
1Physics Department, Bar Ilan University, Ramat Gan 52900, Israel.
Physical Review Letters
|September 16, 2000
Summary
Strontium ruthenate (SrRuO3) exhibits enhanced electrical resistivity at its ferromagnetic domain walls. This enhancement varies with current direction relative to the domain wall orientation below its Curie temperature.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Magnetism
Background:
- Strontium ruthenate (SrRuO3) is an itinerant ferromagnet with a Curie temperature (Tc) around 150 K.
- A stripe domain structure forms in SrRuO3 upon cooling below Tc in zero magnetic field, dictated by its strong uniaxial magnetocrystalline anisotropy.
Purpose of the Study:
- To investigate the influence of ferromagnetic domain walls on the electrical resistivity of SrRuO3.
- To analyze the temperature dependence of resistivity enhancement concerning domain wall orientation.
Main Methods:
- Measurement of electrical resistivity in SrRuO3.
- Characterization of stripe domain structure formation below the Curie temperature.
- Analysis of resistivity anisotropy with respect to domain wall orientation.
Main Results:
- Ferromagnetic domain walls in SrRuO3 significantly enhance electrical resistivity.
- The resistivity enhancement exhibits distinct temperature dependencies for currents applied parallel versus perpendicular to the domain walls.
- The observed phenomena are linked to the interplay between electronic transport and magnetic domain structure.
Conclusions:
- Domain wall contributions to resistivity are a critical factor in understanding SrRuO3's electronic properties.
- The anisotropic behavior of resistivity enhancement provides insights into spin-dependent scattering mechanisms at domain walls.
- Further theoretical and experimental work is needed to fully elucidate the interpretations of these results.