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Updated: Oct 13, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Universal symmetry property of point defects in crystals
Abstract:
Point defects (vacancies, solute atoms, and disorder) are ubiquitous in crystalline solids. With in situ transmission electron microscopy we find clear evidence for the existence of a universal symmetry property of point defects; i.e., the symmetry of short-range order of point defects follows the crystal symmetry when in equilibrium. We further show that this symmetry-conforming property can lead to various interesting effects including "aging-induced microstructure memory" and the associated "time-dependent two-way shape memory."
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