Related Experiment Video
Updated: Jul 22, 2026
Novel 3D/VR Interactive Environment for MD Simulations, Visualization and Analysis
Published on: December 18, 2014
Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on
Bachlechner1, Omeltchenko, Nakano
1Concurrent Computing Laboratory for Materials Simulations, Department of Physics & Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803-4001, USA.
Abstract:
Mechanical behavior of the Si(111)/Si(3)N4(0001) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the (1; 1;1) plane of the silicon substrate with a speed of 500 (+/-100) m/s. Time evolution of the dislocation emission and nature of defects is studied.
More Related Videos
13:58Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020