Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.

P W Fry1, I E Itskevich, D J Mowbray

  • 1Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom.

Physical Review Letters
|October 4, 2000
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Observation of disorder-free localization using a (2+1)D lattice gauge theory on a quantum processor.

Science (New York, N.Y.)·2026
Same author

Electro-Mechanically Tunable, Waveguide-Coupled Photonic-Crystal Cavities with Embedded Quantum Dots.

ACS photonics·2025
Same author

Thermalization and criticality on an analogue-digital quantum simulator.

Nature·2025
Same author

Functional decline among bullous pemphigoid patients: A retrospective monocentric cohort study.

Journal of the European Academy of Dermatology and Venereology : JEADV·2024
Same author

Dynamics of magnetization at infinite temperature in a Heisenberg spin chain.

Science (New York, N.Y.)·2024
Same author

Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality.

Nanotechnology·2023

New research on InAs-GaAs quantum dots reveals unexpected electron-hole localization using Stark effect spectroscopy. This finding in self-assembled quantum dots challenges existing theoretical models.

Area of Science:

  • Semiconductor Nanostructures
  • Quantum Dot Physics
  • Materials Science

Background:

  • Understanding electron-hole wave functions in self-assembled quantum dots is crucial for advanced electronic and optoelectronic devices.
  • Existing theoretical models predict specific localization patterns for electrons and holes within quantum dots.

Purpose of the Study:

  • To investigate the electron-hole wave functions in InAs-GaAs self-assembled quantum dots.
  • To explore the structure and composition of buried quantum dots.
  • To analyze the origin of excited state transitions and electric field tuning.

Main Methods:

  • Stark effect spectroscopy was employed to probe the electronic properties.
  • Data analysis involved modeling to deduce information on quantum dot structure and composition.

Related Experiment Videos

Main Results:

  • Unexpected localization of the hole above the electron was observed, contradicting theoretical predictions.
  • Lateral quantization was identified as the source of excited state transitions.
  • Electric field variation was shown to tune the inhomogeneous distribution of dot energies.

Conclusions:

  • The study provides novel insights into the spatial arrangement of electrons and holes in InAs-GaAs quantum dots.
  • The findings necessitate a revision of current theoretical models for self-assembled quantum dots.
  • The demonstrated electric field tuning offers a pathway for controlling quantum dot energy levels.