Coherent transfer of spin through a semiconductor heterointerface.

Area of Science:

• Solid-state physics
• Materials science
• Quantum information science

Background:

• Understanding spin dynamics in semiconductors is crucial for spintronics.
• Efficient spin transport across heterojunctions with different band gaps remains a challenge.

Purpose of the Study:

• To investigate spin transport dynamics between semiconductors with disparate band gaps.
• To explore the mechanisms of spin coherence preservation during inter-material transfer.

Main Methods:

• Time-resolved two-color pump-probe optical spectroscopy was employed.
• Measurements were conducted on a GaAs substrate with an adjacent ZnSe epilayer.
• Experiments spanned a temperature range from 5 to 300 K.

Main Results:

• Electron spin coherence was successfully generated in GaAs and detected in ZnSe.
• Spin coherence persisted across the semiconductor interface, indicating effective information transfer.
• The study observed temperature-dependent spin coherence dynamics.

Conclusions:

• Spin information can be protected by transporting it to regions with reduced spin decoherence.
• Material interfaces can be utilized to control the phase of spin-coherent states.
• This research offers insights into designing advanced spintronic devices.