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Updated: Aug 1, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Dynamics of Si-H vibrations in an amorphous environment
van Der Voort M1, Rella, van Der Meer LF
1Faculty of Physics and Astronomy, Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands.
Abstract:
We present results of the first vibrational photon-echo, transient-grating, and temperature dependent transient-bleaching experiments on a-Si:H. Using these techniques, and the infrared light of a free electron laser, the vibrational population decay and phase relaxation of the Si-H stretching mode were investigated. Careful analysis of the data indicates that the vibrational energy relaxes directly into Si-H bending modes and Si phonons, with a distribution of rates determined by the amorphous host. Conversely, the pure dephasing appears to be single exponential, and can be modeled by dephasing via two-phonon interactions.
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