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Domain-wall induced coupling between ferromagnetic layers

Thomas1, Samant, Parkin

  • 1IBM Research Division, Almaden Research Center, San Jose, California 95120-6099, USA.

Physical Review Letters
|October 4, 2000
PubMed
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Repeatedly switching a soft magnetic layer erodes the magnetization of a nearby hard magnetic CoPtCr layer. This effect is sensitive to layer thickness and spacing, explained by magnetostatic coupling from stray fields.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Magnetism

Background:

  • Ferromagnetic materials are crucial for data storage.
  • Understanding magnetization dynamics is key to developing advanced magnetic devices.
  • CoPtCr alloys are investigated for their hard magnetic properties.

Purpose of the Study:

  • To investigate the impact of soft magnetic layer switching on hard magnetic CoPtCr layer.
  • To determine the factors influencing the decrease in remanent magnetization.
  • To propose a model explaining the observed magnetic interactions.

Main Methods:

  • Experimental investigation of CoPtCr layer magnetization.
  • Controlled switching of a neighboring soft magnetic layer.
  • Analysis of the effect of layer thickness and spacing.

Related Experiment Videos

  • Development of a theoretical model for interlayer magnetostatic coupling.

    • Main Results:

    • Remanent magnetization of the hard CoPtCr layer decreases with repeated soft layer switching.
    • The effect is strongly dependent on the CoPtCr layer thickness.
    • The spacing between the hard and soft layers significantly influences the magnetization decrease.
    • A model involving interlayer magnetostatic coupling due to stray fields from domain walls was proposed.

    Conclusions:

    • Interlayer magnetostatic coupling is a significant factor in the degradation of hard magnetic layer magnetization.
    • Domain wall stray fields in the soft layer play a critical role.
    • The findings provide insights into magnetic interactions in layered structures and potential limitations in magnetic storage.