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Updated: Jul 24, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Weak localization, hole-hole interactions, and the "Metal"-insulator transition in two dimensions
1Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 OHE, United Kingdom and Semiconductor Nanofabrication Facility, University of New South Wales, Sydney 2052, Australia.
Abstract:
A detailed investigation of the metallic behavior in high-quality GaAs-AlGaAs two-dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ( r(s)>10) and high quality of these systems, both weak localization (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall constant) are present in the so-called metallic phase where the resistivity decreases with decreasing temperature. If these quantum corrections persist down to T = 0, the results suggest that even at high r(s) there is no metallic phase in two dimensions.
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