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Updated: Oct 11, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Optical anisotropy of zinc-blende semiconductors in an electric field
1Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China.
Abstract:
A theory of optical anisotropy for zinc-blende semiconductors in an electric field is derived by extending the formalism of Luttinger and Kohn [Phys. Rev. 97, 869 (1955)] to higher order. This resolves a recent controversy over the correct form of the Hamiltonian for the degenerate valence bands.
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