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Optical second harmonic spectroscopy of boron-reconstructed Si(001)
1Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, USA.
Physical Review Letters
|October 6, 2000
Summary
Surface boron incorporation in silicon (Si) was studied using optical second harmonic generation (SHG) spectroscopy. Unique spectral shifts reveal boron
Area of Science:
- Surface science
- Materials science
- Spectroscopy
Background:
- Silicon (Si) is a fundamental semiconductor material.
- Understanding surface modifications is crucial for semiconductor device performance.
- Boron (B) doping significantly alters Si electronic properties.
Purpose of the Study:
- To investigate the impact of surface boron incorporation on Si(001) electronic properties.
- To differentiate the effects of substitutional surface boron from bulk doping.
- To elucidate the mechanisms behind observed spectroscopic changes.
Main Methods:
- Optical second harmonic generation (SHG) spectroscopy was employed.
- Thermal decomposition of diborane on Si(001) surfaces was performed.
- Ab initio pseudopotential and semiempirical tight binding calculations were utilized for theoretical analysis.
Main Results:
- Boron incorporation at second-layer substitutional sites intensified and redshifted the E1 SHG spectral peak.
- Subsequent hydrogen termination further intensified and blueshifted the E1 peak.
- These effects contrast sharply with bulk B doping or nonsubstitutional B incorporation.
Conclusions:
- Surface boron incorporation induces unique electronic changes distinct from bulk doping.
- The observed phenomena are attributed to surface electric fields and charge transfer to B acceptors.
- Atomic bond rehybridization plays a key role in modifying Si(001) properties.
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