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Scaling at the chaos threshold for interacting electrons in a quantum Dot
Leyronas1, Silvestrov, Beenakker
1Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands.
Physical Review Letters
|October 6, 2000
Summary
This study investigates chaotic mixing in many-electron systems, revealing two distinct regimes of Fock state delocalization. Only the high interaction strength regime exhibits true chaotic mixing, governed by a specific scaling parameter.
Area of Science:
- Quantum mechanics
- Many-body physics
- Statistical mechanics
Background:
- Investigates the complex behavior of many-electron Fock states within confined geometries.
- Focuses on the phenomenon of chaotic mixing driven by random two-body interactions.
Purpose of the Study:
- To distinguish between different regimes of Fock state mixing based on interaction strength, excitation energy, and level spacing.
- To characterize the transition to chaotic mixing and identify the governing scaling parameter.
Main Methods:
- Analysis of Fock state mixing in a confined system.
- Distinguishing between two primary regimes based on system parameters.
- Examination of scaling functions and their dependence on excitation energy.
Main Results:
- Identified two distinct regimes in the dependence of Fock state mixing on interaction strength (V), excitation energy (ε), and level spacing (Δ).
- Observed large-scale delocalization in Fock space across both regimes.
- Characterized the crossover region by a pronounced maximum in a scaling function, particularly with increasing excitation energy.
- Determined the scaling parameter governing the transition as (εV/Δ²)ln(Δ/V).
Conclusions:
- The study distinguishes between general Fock state delocalization and true chaotic mixing, which occurs only at high interaction strengths.
- The crossover region exhibits unique scaling behavior, highlighting the role of excitation energy.
- The identified scaling parameter provides a quantitative measure for the transition to chaos in these quantum systems.