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Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering
1Instituto de Fisica "Gleb Wataghin," Universidade Estadual de Campinas, 13083-970 Campinas-SP, Brazil.
Physical Review Letters
|October 6, 2000
Summary
Blue-green light emission from cubic indium gallium nitride (InGaN) alloys is observed. Selective resonant Raman spectroscopy reveals quantum confinement in indium-rich quantum dots causes this emission, influenced by dot size and alloy fluctuations.
Area of Science:
- Materials Science
- Solid State Physics
- Optoelectronics
Background:
- Cubic InGaN alloys are promising for optoelectronic applications.
- Understanding light emission mechanisms is crucial for device optimization.
Purpose of the Study:
- To investigate the origin of blue-green light emission in cubic InGaN alloys.
- To elucidate the role of quantum confinement and material structure in emission properties.
Main Methods:
- Growth of cubic InxGa1-xN alloys using molecular beam epitaxy.
- Observation of light emission at room temperature and 30 K.
- Application of selective resonant Raman spectroscopy (RRS).
Main Results:
- Emission of blue-green light was observed from the InGaN alloys.
- RRS confirmed emission originates from quantum confinement in In-rich quantum dots.
- In content and dot size fluctuations were identified as key factors affecting emission wavelengths.
Conclusions:
- Phase-separated In-rich quantum dots are responsible for the observed light emission.
- Quantum confinement effects within these dots dictate the emission characteristics.
- Material composition fluctuations significantly influence the emission spectrum.
