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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Published on: May 28, 2016

Comment on "Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers"

Gold1, Dolgopolov

  • 1Centre d'Elaboration de Materiaux et d'Etudes Structurales 29 Rue Jeanne Marvig, 31055 Toulouse, France.

Physical Review Letters
|October 13, 2000
PubMed
Abstract

No abstract available in PubMed .

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