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Updated: Aug 12, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Detecting electronic states at stacking faults in magnetic thin films by tunneling spectroscopy
Vazquez De Parga AL1, Garcia-Vidal, Miranda
1Departamento de Fisica de la Materia Condensada and Instituto de Ciencia de Materiales "Nicolas Cabrera," Universidad Autonoma de Madrid, 28049 Madrid, Spain.
Abstract:
Co islands grown on Cu(111) with a stacking fault at the interface present a conductance in the empty electronic states larger than the Co islands that follow the stacking sequence of the Cu substrate. Electrons can be more easily injected into these faulted interfaces, providing a way to enhance transmission in future spintronic devices. The electronic states associated with the stacking fault are visualized by tunneling spectroscopy, and its origin is identified by band structure calculations.
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