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Related Experiment Videos

RETRACTED: A light-emitting field-effect transistor.

J H Schön1, A Dodabalapur, C Kloc

  • 1Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA. hendrik@lucent.com

Science (New York, N.Y.)
|November 4, 2000
PubMed
Summary
This summary is machine-generated.

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Researchers developed an ambipolar light-emitting field-effect transistor using alpha-sexithiophene single crystals. This device achieves electrically driven laser action through amplified spontaneous emission at low threshold currents.

Area of Science:

  • Organic electronics
  • Semiconductor physics
  • Optoelectronics

Background:

  • Organic semiconductors offer potential for novel electronic and optoelectronic devices.
  • Ambipolar field-effect transistors (FETs) are crucial for controlling charge carrier injection and transport.
  • Light-emitting FETs (LEFETs) integrate light emission with transistor functionality.

Purpose of the Study:

  • To investigate the structure and operating characteristics of an ambipolar light-emitting field-effect transistor (LEFET).
  • To demonstrate electrically driven laser action in an organic semiconductor device.
  • To explore the potential of alpha-sexithiophene single crystals for laser applications.

Main Methods:

  • Fabrication of a three-terminal ambipolar LEFET using single crystals of alpha-sexithiophene.

Related Experiment Videos

  • Controlled injection of electrons and holes from source and drain electrodes.
  • Modulation of charge carrier concentrations using gate and drain-source voltages.
  • Observation and characterization of light emission and amplified spontaneous emission.

    • Main Results:

    • The ambipolar LEFET successfully injected and controlled both electrons and holes.
    • Exciton generation and radiative recombination were observed.
    • Coherent light emission via amplified spontaneous emission was achieved above a low threshold current.
    • The device demonstrated characteristics suitable for electrically driven laser action.

    Conclusions:

    • The developed ambipolar LEFET based on alpha-sexithiophene single crystals is a promising architecture for organic lasers.
    • Electrically driven laser action in organic semiconductors is feasible with this three-terminal device design.
    • Further development could lead to efficient and low-cost organic laser sources.