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Origin of antimony segregation in GaInSb/InAs strained-layer superlattices
1Department of Physics, Texas A&M University, College Station, Texas 77843, USA.
Physical Review Letters
|November 18, 2000
Summary
Scanning tunneling microscopy reveals antimony (Sb) segregation profiles in gallium indium antimonide/indium arsenide (GaInSb/InAs) superlattices. A model explains Sb seed evolution, linking it to bilayer reconstruction during epitaxy.
Area of Science:
- Materials Science
- Solid State Physics
- Surface Science
Background:
- Strained-layer superlattices (SLS) are crucial in semiconductor device fabrication.
- Understanding atomic segregation is key to controlling SLS properties.
- Antimony (Sb) segregation in GaInSb/InAs heterostructures impacts device performance.
Purpose of the Study:
- To investigate antimony (Sb) segregation profiles in GaInSb/InAs strained-layer superlattices.
- To develop a model explaining the spatial evolution of Sb segregation.
- To elucidate the origin of the Sb segregation seed.
Main Methods:
- Cross-sectional scanning tunneling microscopy (STM) was employed to visualize atomic structures.
- A one-dimensional model was developed to parameterize Sb segregation.
- Analysis of Sb seed evolution under varying growth conditions.
Main Results:
- STM successfully reconstructed Sb segregation profiles in GaInSb/InAs SLS.
- The Sb segregation profiles were accurately described by a 1D model.
- The Sb seed size varied from 2/3 to 1/2 monolayer with changing anion richness.
Conclusions:
- Sb segregation in GaInSb/InAs SLS can be quantitatively analyzed using STM.
- The observed Sb segregation is driven by two-anion-layer exchange.
- Sb-bilayer reconstruction during GaInSb epitaxy is the likely origin of the segregation seed.
