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Published on: April 4, 2017
Silicon diodes as detectors for backscatter radiation in photon fields
B Lennernäs1, B Rosengren, G Rikner
1Department of Oncology, University of Gothenburg, Gothenburg, Sweden. bo.lennernas@oncology.gu.se
Oncology Reports
|December 15, 2000
Summary
Unencapsulated silicon semiconductor detectors effectively detect backscatter radiation. Different materials like lead and titanium significantly increased detector signals compared to PMMA, aligning with Monte Carlo simulations.
Area of Science:
- Medical Physics
- Radiation Detection
- Semiconductor Devices
Background:
- Backscatter radiation detection is crucial in various applications.
- Silicon semiconductor detectors offer potential for sensitive radiation measurement.
- Characterizing detector response to different backscatter materials is essential for accurate dosimetry.
Purpose of the Study:
- To evaluate unencapsulated silicon semiconductor detectors for backscatter radiation detection.
- To compare experimental results with Monte Carlo (MC) simulations.
- To assess the impact of different backscatter materials on detector signal output.
Main Methods:
- A specialized silicon diode detector was fabricated for material interaction studies.
- Various backscatter materials (PMMA, Ti, Fe, Pb) were tested.
- Detector current was integrated under constant photon fluence from a Co-60 source.
Main Results:
- Using titanium, iron, and lead as backscatter materials increased the diode signal by 21%, 27%, and 73% respectively, compared to PMMA.
- Experimental findings showed reasonable agreement with MC calculations.
- The effective measurement depth within the silicon detector influenced the results.
Conclusions:
- Unencapsulated silicon detectors are viable for backscatter radiation detection.
- Material selection significantly impacts signal amplification in silicon detectors.
- MC simulations provide a reliable method for modeling detector response to backscatter radiation.
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