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Universal distribution of transparencies in highly conductive Nb/AlO(x)/Nb junctions

Y Naveh1, V Patel, D V Averin

  • 1Department of Physics and Astronomy, State University of New York, Stony Brook, New York 11794-3800, USA.

Physical Review Letters
|January 3, 2001
PubMed

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P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...