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Structure Sensitive Reaction Channels of Molecular Hydrogen on Silicon Surfaces

Dürr1, Raschke, Pehlke

  • 1Max-Planck-Institut für Quantenoptik, D-85740 Garching, Germany.

Physical Review Letters
|January 3, 2001
PubMed
Summary

Hydrogen adsorption on silicon surfaces is significantly enhanced by pre-existing hydrogen atoms. This study reveals how hydrogen termination lowers adsorption barriers on Si(001) surfaces, improving molecular hydrogen dissociation.

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