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C-MOS flat-panel sensor for real-time X-ray imaging.

K Nakagawa1, S Mizuno, Y Aoki

  • 1Department of Radiology, University of Tokyo Hospital, Japan.

Radiation Medicine
|January 12, 2001
PubMed
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This study introduces a novel complementary metal-oxide-semiconductor (C-MOS) flat-panel X-ray device for real-time digital imaging. The C-MOS sensor represents a significant advancement for clinical X-ray applications.

Area of Science:

  • Medical Imaging
  • Solid-State Electronics

Background:

  • Traditional X-ray imaging systems often lack real-time capabilities.
  • Advancements in detector technology are crucial for improving diagnostic speed and accuracy.

Purpose of the Study:

  • To introduce a novel flat-panel, self-scanning, solid-state diagnostic X-ray imaging device.
  • To evaluate the performance of this device utilizing complementary metal-oxide-semiconductor (C-MOS) arrays for real-time digital X-ray imaging.

Main Methods:

  • Developed and tested a 5.12 cm by 5.12 cm sensor area device.
  • The device integrates a cesium iodide scintillator with C-MOS detector arrays (256x256 pixels).
  • Each pixel comprises a C-MOS photodiode sensor coupled to a C-MOS field-effect transistor (FET).

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Main Results:

  • Achieved a sampling speed of 30 frames per second.
  • Demonstrated a spatial resolution of 2.5 lines per mm.
  • Recorded a noise level of 1.5 mV rms and a maximum signal of 1.8 V.

Conclusions:

  • The C-MOS flat-panel sensor is a significant advancement for real-time X-ray imaging.
  • Fabrication of a large-area sensor is necessary for widespread clinical adoption.