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Simultaneous Synthesis of Single-walled Carbon Nanotubes and Graphene in a Magnetically-enhanced Arc Plasma
Published on: February 2, 2012
Resonant electron scattering by defects in single-walled carbon nanotubes
M Bockrath1, W Liang, D Bozovic
1Department of Physics, Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.
Science (New York, N.Y.)
|February 24, 2001
Summary
Defects in metallic carbon nanotubes cause significant resistance changes. These defects enable resonant electron scattering and can form quantum dots, impacting nanotube electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Metallic single-walled carbon nanotubes (SWCNTs) are promising for electronic applications.
- Understanding defects is crucial for controlling SWCNT properties.
Purpose of the Study:
- To characterize defects in individual metallic SWCNTs.
- To investigate the impact of defects on electrical transport properties.
- To explore the potential of defects for creating novel electronic devices.
Main Methods:
- Transport measurements at room and low temperatures.
- Scanned gate microscopy to probe local electronic potentials.
- Analysis of gate voltage-dependent resistance and resonant scattering phenomena.
Main Results:
- A significant portion of metallic SWCNTs shows gate-dependent resistance at room temperature.
- Resonant electron scattering by defects was identified as the cause.
- A reflection coefficient of approximately 0.5 at scattering resonance peaks was measured.
- An intratube quantum dot device was successfully fabricated using two defects.
Conclusions:
- Defects in metallic SWCNTs significantly influence their electrical transport.
- Resonant scattering by defects is a key mechanism affecting resistance.
- These defects can be utilized to engineer functional quantum dot devices within SWCNTs.
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