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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Manipulation of elementary charge in a silicon charge-coupled device
1Ntt Basic Research Laboratories, 3-1 Morinosata Wakamiya, Atsugi, Kanagawa 243-0198, Japan. afuji@aecl.ntt.co.jp
Nature
|March 30, 2001
Summary
Researchers developed a novel silicon-based device for manipulating single elementary charges. This new charge-coupled device offers a simpler, more scalable alternative to existing single-electron tunnelling technologies.
Area of Science:
- Solid State Physics
- Nanoelectronics
- Semiconductor Devices
Background:
- The ultimate limit for electronic device operation is single charge manipulation.
- Existing single-electron tunnelling devices, while capable of this, are complex to fabricate.
- There is a need for simpler, scalable devices for elementary charge manipulation.
Purpose of the Study:
- To demonstrate a new type of device capable of manipulating elementary charge.
- To develop a device suitable for large-scale integration.
- To realize the first silicon-based single-charge transfer device.
Main Methods:
- Utilizing two closely packed silicon wire-Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs).
- Developing a scheme to generate and store holes in MOSFET channels.
- Implementing hole transfer at the elementary charge level between MOSFETs.
Main Results:
- Demonstrated successful manipulation and transfer of elementary charges between two silicon wire-MOSFETs.
- Achieved precise monitoring of charge position.
- Operated the device at 25 K, confirming its function as a charge-coupled device.
Conclusions:
- A novel silicon-based single-charge transfer device has been realized.
- This device offers a simpler fabrication process and better scalability compared to previous technologies.
- This represents a significant advancement in the field of nanoelectronics and single-charge manipulation.
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