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In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole
E Tutuc1, E P De Poortere, S J Papadakis
1Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA.
Abstract:
Using a novel technique, we make quantitative measurements of the spin polarization of dilute [ (3.4-6.8)x10(10) cm(-2)] GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating before it is fully spin polarized. The minority-spin population at the transition is approximately 8x10(9) cm(-2), close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.