Related Experiment Video
Updated: Jul 29, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Giant Barkas effect observed for light ions channeling in Si
G M Azevedo1, P L Grande, M Behar
1Instituto de Física da Universidade Federal do Rio Grande do Sul, Avenida Bento Gonçalves 9500, 91501-970, Porto Alegre, RS, Brazil.
Abstract:
Measurements of the electronic energy loss are presented for (4)He and (7)Li ions channeling along the Si main axial directions at intermediate to high projectile energies. The Barkas effect, an energy-loss enhancement proportional to the third power of the projectile charge at high energies, is clearly separated from other processes. It reaches about 50% for Li ions channeling along the Si [110] direction. The observed Barkas contribution from the valence-electron gas is in fair agreement with the Lindhard model.

