Mechanisms for the generation of coherent longitudinal-optical phonons in GaAs /AlGaAs multiple quantum wells

We show that coherent optical phonons in GaAs multiple quantum wells are generated in a completely different way as compared to bulk GaAs. Unlike in bulk GaAs where the ultrafast screening of electric fields by photogenerated charge carriers is known to be dominant, three distinctive generation mechanisms contribute simultaneously in multiple quantum wells. The interplay between impulsive Raman scattering, forbidden Raman scattering, and screening of surface electric fields, whose relative strengths are determined by laser intensity, detuning from the exciton resonance, and the barrier width, generates a rich variety of new phenomena.