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Related Experiment Videos

Radio-frequency single-electron transistor as readout device for qubits: charge sensitivity and backaction.

A Aassime1, G Johansson, G Wendin

  • 1Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96, Göteborg, Sweden.

Physical Review Letters
|May 1, 2001
PubMed
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Radio-frequency single-electron transistors (rf-SETs) can effectively read out charge qubits. Their low backaction allows for faster qubit measurements than qubit decoherence, enabling single-shot readout.

Area of Science:

  • Quantum computing
  • Solid-state physics
  • Nanotechnology

Background:

  • Charge qubits are promising for quantum computation but require sensitive readout.
  • Radio-frequency single-electron transistors (rf-SETs) offer high sensitivity for detecting charge states.

Purpose of the Study:

  • To evaluate the rf-SET as a readout device for charge qubits.
  • To quantify the charge sensitivity and backaction of the rf-SET.
  • To compare measurement time with qubit decoherence time.

Main Methods:

  • Fabrication and characterization of an rf-SET.
  • Measurement of rf-SET charge sensitivity.
  • Assessment of rf-SET backaction on a Cooper-pair box qubit.

Main Results:

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  • Achieved a charge sensitivity of 6.3 micro-electrons/sqrt(Hz).
  • Demonstrated minimal backaction of the rf-SET on the Cooper-pair box.
  • Determined that qubit mixing time can exceed measurement time.

Conclusions:

  • rf-SETs are suitable for high-fidelity charge qubit readout.
  • Single-shot qubit state measurement is feasible with this technique.
  • This readout method minimizes qubit state disturbance.