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Standing optical phonons in finite semiconductor superlattices studied by resonant Raman scattering in a double
A Fainstein1, M Trigo, D Oliva
1Centro Atómico Bariloche & Instituto Balseiro, C.N.E.A., 8400 S. C. de Bariloche, Argentina.
Abstract:
We report optical double resonant enhancement of Raman scattering in a new double microcavity geometry. The design allows almost backscattering geometries, providing easy access to the excitations' in-plane dispersion. The cavity is used to study the phonon spectra of a finite GaAs/AlAs superlattice. A new type of "standing optical vibration" is demonstrated involving the GaAs confined phonons with a standing wave envelope determined by the superlattice thickness. A strong dispersion of the first order standing wave mode is observed, as well as its anticrossing with higher order confined modes of the same symmetry.