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Related Experiment Video

Updated: Jul 15, 2026

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
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Ultrafast laser-induced phase transitions in amorphous GeSb films.

J P Callan1, A M Kim, C A Roeser

  • 1Department of Physics and Division of Engineering and Applied Sciences, Gordon McKay Laboratory, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA. paul_callan@post.harvard.edu

Physical Review Letters
|May 1, 2001
PubMed
Summary

Femtosecond laser pulses induce ultrafast phase transitions in amorphous germanium-antimony (GeSb) films. Contrary to disorder-to-order models, the transition leads to a distinct nonthermal, disordered state, not a crystalline phase.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Ultrafast Spectroscopy

Background:

  • Amorphous semiconductors are crucial for optical data storage.
  • Understanding ultrafast phase transitions in these materials is key to improving device performance.
  • Previous models suggested laser-induced transitions were disorder-to-order.

Purpose of the Study:

  • To investigate the dynamics of laser-induced phase transitions in Sb-rich amorphous GeSb films.
  • To clarify the nature of the transient phase formed after femtosecond laser excitation.
  • To challenge existing disorder-to-order transition models.

Main Methods:

  • Time-resolved spectral dielectric function measurements.
  • Femtosecond laser pulse excitation of Sb-rich amorphous GeSb films.

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  • Analysis of the dielectric response to probe phase changes.

    • Main Results:

    • Ultrafast nonthermal phase generation within 200 fs.
    • The transient phase's dielectric function differs significantly from the crystalline state.
    • Observed dielectric properties align with a liquid-like disordered state, not a crystalline phase.

    Conclusions:

    • Laser-induced phase transition in amorphous GeSb is not a simple disorder-to-order process.
    • A novel, distinct disordered state is formed rapidly after excitation.
    • These findings necessitate a revision of phase transition mechanisms in amorphous chalcogenides.