Related Experiment Video
Updated: Oct 7, 2026
Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
Analysis of the rutile-ring method of frequency-temperature compensating a high-Q whispering gallery sapphire
M E Tobar1, J G Hartnett, G Duchiron
1Department of Physics, University of Western Australia, Nedlands 6903, WA, Australia. mike@physics.uwa.edu.au
Abstract:
The rutile-ring method of dielectrically frequency-temperature compensating a high-Q whispering gallery (WG) sapphire resonator is presented. Two and three-dimensional finite element (FE) analysis has been implemented to design and analyze the performance of such resonators, with excellent agreement between theory and experiment. A high-Q factor of 30 million at 13 GHz and compensation temperature of 56 K was obtained. It is shown the frequency-temperature compensation can occur either because the rutile adds a small perturbation to the sapphire resonator or because of a mode interaction with a resonant mode in the rutile. The characteristics of both of these methods are described, and it is shown that for high frequency stability, it is best to compensate perturbatively.
