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Observation of phonon bottleneck in quantum dot electronic relaxation
J Urayama1, T B Norris, J Singh
1Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2099, USA.
Physical Review Letters
|June 1, 2001
Abstract:
Time-resolved differential transmission measurements of self-assembled In0.4Ga0.6As quantum dots clearly indicate a phonon bottleneck between the n = 2 and n = 1 electronic levels. The key to this observation is the generation of electrons in dots where there are no holes so that electron-hole scattering does not mask the bottleneck. We use a simple carrier capture model consisting of two capture configurations to explain the bottleneck signal and offer arguments to rule out other possible sources of the signal.