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Related Experiment Video

Updated: Jul 19, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Ultraviolet emission from a diamond pn junction.

S Koizumi¹, K Watanabe, M Hasegawa

¹Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan. KOIZUMI.satoshi@nims.go.jp

Science (New York, N.Y.)

|June 9, 2001

Summary

Researchers developed an ultraviolet light-emitting diode using a diamond pn junction. This device emits strong ultraviolet light at 235 nanometers, attributed to free exciton recombination in the diamond material.

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Area of Science:

Materials Science
Solid-State Physics
Optoelectronics

Background:

Diamond is a promising material for optoelectronic devices due to its wide bandgap and thermal conductivity.
Previous efforts in diamond-based light-emitting diodes (LEDs) have faced challenges in achieving efficient light emission.
The development of reliable pn junctions in diamond is crucial for LED fabrication.

Purpose of the Study:

To realize an ultraviolet light-emitting diode (UV-LED) utilizing a diamond pn junction.
To investigate the electroluminescence properties of a boron- and phosphorus-doped diamond pn junction.
To confirm the emission mechanism responsible for UV light generation.

Main Methods:

Epitaxial growth of boron-doped p-type and phosphorus-doped n-type diamond layers on a single crystalline diamond substrate (111 surface).
Fabrication of a pn junction by integrating the p-type and n-type diamond layers.
Characterization of the electrical properties of the diamond pn junction.
Measurement of electroluminescence spectra under forward bias conditions.

Main Results:

The fabricated diamond pn junction demonstrated good diode characteristics.
Strong ultraviolet light emission was observed at a wavelength of 235 nanometers under a forward bias of approximately 20 volts.
The observed emission was attributed to free exciton recombination within the diamond material.

Conclusions:

The successful realization of a UV-LED based on a diamond pn junction is reported.
Diamond pn junctions are viable for generating ultraviolet light emission.
Free exciton recombination is identified as the primary mechanism for UV emission in this diamond LED, paving the way for advanced UV optoelectronic devices.