Dynamic chemical mapping near a Si/SiO2 interface at elevated temperatures using plasmon-loss images

Plasmon-loss imaging was applied to chemical mapping during an in-situ heating experiment. The technique was applied to observation of vibration of a Si/SiO2 interface which took place during reduction of SiO2 at high temperature. The chemical maps of Si and SiO2 were recorded dynamically using a conventional TV-VTR system at a time resolution of 1/30 s.